QSI 830nm 200mw Infrared 레이저 다이오드 Invisible 레이저 빔 QL83R6SX TO-18 5.6mm
QL83R6S-A/B/C is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 200mW for industrial optical module and sensor applications.
[특징]
1. 파장: 830nm(typ.)
2. Optical Power Output: 200mW CW
3. Package Type: TO-18 (5.6mm)
4. Built-in Photo Diode for Monitoring 레이저 다이오드
[Applications]
1. Motion Recognition Sensor
2. Industrial Optical Module