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200nm~1100nm 3.2mm Silicon PIN 포토다이오드 TO-5 Package

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200nm~1100nm 3.2mm Silicon PIN 포토다이오드 TO-5 Package

[특징]
High reliability, low dark current.
200-1100nm spectral range.
Active diameter 3.2x3.2mm.
Hermetic TO5 Can with UV window or with receptacle.

[Applications]
Optical sensor
Optical power meter
Industrial automatic control 
Science analysis and experiment
Space light detect equipment
Response spectrum testing

Absolute maximum ratings:

Parameter Symbol Value Unit
Operating temperature Top -40~+85
Storage temperature Tstg -40~+100
Forward current If 16 mA
Reverse voltage Vr 20 V
Soldering temperature(time) Ts(10s) 260


Electrical and optical characteristics:(T=25℃)

Parameter Symbol Unit Typical Value
Active diameter Φ mm 3.2*3.2
Spectral range λ nm 200-1100
Responsivity Re (VR=0V,λ=200nm ) mA/mW 0.08
Re (VR=0V,λ=405nm ) mA/mW 0.28
Re (VR=0V,λ=650nm ) mA/mW 0.43
Re (VR=0V,λ=905nm ) mA/mW 0.55
Re (VR=0V,λ=1064nm ) mA/mW 0.22
Response time Tr (RL=50Ω,VR=5V) ns 50
Dark current Id(VR=0V) pA 1
Id(VR=5V) pA 200
Reverse Breakdown voltage VBR (IR=10uA) V 40
Junction capacitance Cj (f=1MHz, VR=0V) pF 1500
Cj (f=1MHz, VR=5V) pF 300
Saturated Optical Power Ps(VR=5V) mW 25
Operating voltage VR V 0-15
Shunt resistance Rsh (VR=10mV) 10
Package Hermetic TO5 Can with UV window or with receptacle.


메모:
(1) The default is TO-5 Can package, please contact us if you need other intrefaces.
(2) If the quantity you ordered is less than 10 or far more than 10, the sales price is different, Pleas contact us.
(3) Delivery time: We have a small amount of commonly used PD. When the quantity is large, it needs to be re-produced, generally 1 to 3 weeks, different models have different delivery cycles.
 


200-1100nm photodiode

200-1100nm photodiode

200-1100nm photodiode

200-1100nm photodiode
 






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