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400nm~1100nm 905nm Silicon 500um Avalanche 포토다이오드 TO46 Package

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400nm~1100nm 905nm Silicon 500um Avalanche 포토다이오드 TO46 Package

[특징]
High reliability, low dark current.
Top illumination Planar APD.
High Gain up to M=300.
Wavelength 400-1100nm.
Hermetic TO46 Can or with receptacle or with fiber coupling.

[Applications]
Ultra Weak pulse optical detecting
Laser lidar, laser range finding
Optical fiber sensor, OTDR
high resolution Optical Coherence Tomography
Science analysis and experiment

The absolute values:

Parameter Symbol Value Unit
Operating temperature Top -45~+85
Storage temperature Tstg -45~+125
Forward current If 1 mA
Operating Voltage Vo 0.95×VBR V
Power dissipation Ip 1 mW
Soldering temperature(time) Ts(10s) 260


The opto-eletronic characteritics (T=22±3℃)

Parameter Symbol Test Conditions Min Typ. Max Unit
Response Spectrum λ   400~1100 nm
Active diameter φ   500 μm
Reponsivity Re λ=905nm, 1μw, M=1   0.57   A/W
Multiplication gain M λ=905nm, 1μw, 0.8VBR   60    
λ=905nm, 1μw, 0.85VBR   100    
Response time Tr M=100,RL=50Ω,λ=905nm   0.5   ns
Dark current Id M=100   0.05 1.2 nA
Total capacitance Ctot M=100,f=1MHz   1.5   pF
Reverse breakdown voltage VBR IR=10uA 120   200 V
Maximum instantaneous input power P M=100,905nm,10ns,10KHZ     0.3 mW
Operating voltage temperature coefficient δ Tc=-40℃~85℃   0.9 1.3 V/℃
Package Hermetic TO46 Can or with receptacle or with fiber coupling


메모:
(1) The default is TO-46 Can package, please contact us if you need other intrefaces.
(2) If the quantity you ordered is less than 10 or far more than 10, the sales price is different, Pleas contact us.
(3) Delivery time: We have a small amount of commonly used PD. When the quantity is large, it needs to be re-produced, generally 1 to 3 weeks, different models have different delivery cycles.

 

400-1100nm Avalanche photodiode

400-1100nm Avalanche photodiode

400-1100nm Avalanche photodiode

400-1100nm Avalanche photodiode

400-1100nm Avalanche photodiode

400-1100nm Avalanche photodiode
 






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